Datasheet.pdf Transistor. Uploaded by Arelo Narvaez. Unisonic technologies co., LTD 2SC1384 NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC1384 is power amplifier and driver. Shown above is a section of an IBM data sheet supplied to the Army Signal Corps in 1956. Note the relatively low cutoff frequency of 5 Mc for these early IBM alloy junction transistors. HISTORIC GERMANIUM COMPUTER TRANSISTORS IBM.
Cross-Reference Search 2SC550 Datasheet (PDF) 1.1. Size:236K update Ordering number: ENA1061A 2SC5501A RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4 Features. Low-noise: NF=1.0dB typ (f=1GHz). High gain ⏐ ⏐2: S21e =13dB typ (f=1GHz). High cut-off frequency: fT=7GHz typ. Large allowable collector dissipation: PC=500mW max Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ra 1.2. Size:48K sanyo Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Low noise: NF=1.1dB typ (f=1GHz).
Unit:mm 2 High gain:? =12dB typ (f=1GHz).
2161 High cutoff frequency: fT=8GHz typ. 2SC5502 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1: Emitter 2: Collector 3: 1.3. Size:41K sanyo Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. Unit:mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process).
2SC5506 Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1: Base 1 2 3 1.4. Size:264K sanyo Ordering number: ENA1061 2SC5501A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5501A Amplifier Applications Features Low-noise: NF=1.0dB typ (f=1GHz). High gain:?S21e?2=13dB typ (f=1GHz). High cut-off frequency: fT=7GHz typ. Large allowable collector dissipation: PC=500mW max.
Specifications Absolute Maximum Ra 1.5. Size:46K sanyo Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise: NF=1.0dB typ (f=1GHz).
Unit:mm 2 High gain:? =13dB typ (f=1GHz). 2161 High cutoff frequency: fT=7GHz typ. 2SC5501 Large allowable collector dissipation: PC=500mW max. 0.65 0.65 0.15 0.3 4 3 0 1.6. Size:45K sanyo Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise: NF=1.2dB typ (f=1GHz).
Unit:mm 2 High gain:? =15dB typ (f=1GHz). 2161 High cutoff frequency: fT=9.0GHz typ. 2SC5503 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1: Emitter 2: Collec 1.7. Size:48K sanyo Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise: NF=0.9dB typ (f=1GHz). Unit:mm: NF=1.4dB typ (f=1.5GHz). 2161 2 High gain:?
=11dB typ (f=1GHz). 2SC5504 High cutoff frequency: fT=11GHz typ. Low voltage, low current operation.
0.65 0.65 (VCE=1V, IC=1m 1.8. Size:91K nec PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA fT = 25 GHz 1.9. Size:35K nec PRELIMINARY DATA SHEET NPN SILICON HIGH NE661M04 FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. DESCRIPTION M04 T 1.10.
Size:76K nec DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz f 1.11. Size:81K nec DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 G 1.12.
Size:72K panasonic Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 ¦ Features? 3.2±0.1 High-speed switching TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 1.4±0.2 2.6±0.1 1.6±0.2 ¦ Absolute Maximum Ratings TC = 25°C 0.8±0.1 0.55±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter ope.